生命周期: | Transferred | 包装说明: | CYLINDRICAL, O-PBCY-W3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.5 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 60 V | 配置: | DARLINGTON |
最小直流电流增益 (hFE): | 4000 | JESD-30 代码: | O-PBCY-W3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | BOTTOM |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD1209(K)RR | HITACHI |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon | |
2SD1209(K)RR | RENESAS |
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100 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR | |
2SD1209(K)TZ | HITACHI |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92MOD, | |
2SD1209(K)TZ | RENESAS |
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1000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92MOD, 3 PIN | |
2SD1209K | HITACHI |
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Silicon NPN Epitaxial, Darlington | |
2SD1209K | RENESAS |
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Silicon NPN Epitaxial, Darlington | |
2SD1209KTZ-E | RENESAS |
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Silicon NPN Epitaxial, Darlington | |
2SD1210 | ISC |
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isc Silicon NPN Darlington Power Transistor | |
2SD1211 | PANASONIC |
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Silicon NPN epitaxial planer type(For low-frequency amplification) | |
2SD1211R | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 500MA I(C) | SC-51 |