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2SC5592 PDF预览

2SC5592

更新时间: 2024-10-31 22:52:47
品牌 Logo 应用领域
松下 - PANASONIC 晶体转换器小信号双极晶体管开关光电二极管
页数 文件大小 规格书
2页 53K
描述
Silicon NPN epitaxial planer type(For DC-DC converter)

2SC5592 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
最大集电极电流 (IC):2.5 A集电极-发射极最大电压:15 V
配置:SINGLE最小直流电流增益 (hFE):280
JESD-30 代码:R-PDSO-G3JESD-609代码:e6
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.6 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Bismuth (Sn/Bi)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):180 MHz
最大关闭时间(toff):110 ns最大开启时间(吨):30 ns
Base Number Matches:1

2SC5592 数据手册

 浏览型号2SC5592的Datasheet PDF文件第2页 
Transistors  
2SC5592  
Silicon NPN epitaxial planer type  
Unit: mm  
+0.10  
–0.05  
For DC-DC converter  
0.40  
3
+0.10  
0.16  
–0.06  
For various driver circuits  
I Features  
1
2
Low collector to emitter saturation voltage VCE(sat) , large current  
capacitance  
High-speed switching  
(0.95) (0.95)  
1.9 0.1  
+0.20  
2.90  
–0.05  
Mini type 3-pin package, allowing downsizing and thinning of the  
equipment.  
10°  
Complementary pair with 2SA2010  
I Absolute Maximum Ratings Ta = 25°C  
1: Base  
2: Emitter  
3: Collector  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Rating  
Unit  
V
EIAJ: SC-59  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
15  
Mini Type Package (3-pin)  
15  
V
5
10  
V
Marking Symbol: 2T  
A
IC  
2.5  
A
Collector power dissipation *  
Junction temperature  
Storage temperature  
PC  
600  
mW  
°C  
°C  
Tj  
150  
Tstg  
55 to +150  
Note) : Measure on the ceramic substrate at 15 × 15 × 0.6 mm3.  
*
I Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
ICBO  
Conditions  
Min  
Typ  
Max  
Unit  
µA  
V
Collector cutoff current  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
VCB = 10 V, IE = 0  
0.1  
VCBO  
VCEO  
VEBO  
hFE1  
IC = 10 µA, IE = 0  
15  
15  
IC = 1 mA, IB = 0  
V
IE = 10 µA, IC = 0  
5
V
1
Forward current transfer ratio *  
VCE = 2 V, IC = 100 mA  
VCE = 2 V, IC = 2.5 A  
IC = 1 A, IB = 10 mA  
IC = 2.5 A, IB = 50 mA  
VCB = 10 V, IE = 0, f = 1 MHz  
400  
280  
1 000  
320  
hFE2  
1
Collector to emitter saturation voltage *  
VCE(sat)  
110  
220  
30  
mV  
mV  
pF  
Collector output capacitance  
Transition frequency  
Cob  
fT  
VCB = 10 V, IE = −50 mA  
f = 200 MHz  
180  
MHz  
2
Turn-on time *  
ton  
tstg  
tf  
30  
100  
10  
ns  
ns  
ns  
2
Storage time *  
2
Fall time *  
Note) 1: Rank classification (1 ms)  
*
2: Refere to the measurement circuit.  
*
1

2SC5592 替代型号

型号 品牌 替代类型 描述 数据表
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