生命周期: | Obsolete | Reach Compliance Code: | compliant |
风险等级: | 5.79 | 最大集电极电流 (IC): | 0.035 A |
配置: | Single | 最小直流电流增益 (hFE): | 60 |
最高工作温度: | 150 °C | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.115 W | 子类别: | Other Transistors |
表面贴装: | YES |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5606(NE66219) | ETC |
获取价格 |
Discrete | |
2SC5606_1 | NEC |
获取价格 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIG | |
2SC5606-A | NEC |
获取价格 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIG | |
2SC5606-A | RENESAS |
获取价格 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION | |
2SC5606-A-YFB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, LEAD FRE | |
2SC5606-FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SU | |
2SC5606-FB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SU | |
2SC5606-T1 | RENESAS |
获取价格 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION | |
2SC5606-T1 | NEC |
获取价格 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIG | |
2SC5606-T1-A | NEC |
获取价格 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIG |