是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Lifetime Buy | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.43 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 22 A | 集电极-发射极最大电压: | 900 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 4.8 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 220 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 2 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5614 | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
2SC5614 | CEL |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
2SC5614(NE856M13) | ETC |
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Discrete | |
2SC5614-A | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
2SC5614EB | ETC |
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TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SMT | |
2SC5614-EB-A | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
2SC5614EB-T3 | ETC |
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TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SMT | |
2SC5614FB | ETC |
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TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SMT | |
2SC5614-FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
2SC5614-FB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic |