Datasheet > 2SC5615FB-A

2SC5615FB-A

更新时间： 2024-11-22 08:30:59

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
31页	126K
描述
TRANSISTOR,BJT,NPN,10V V(BR)CEO,65MA I(C),SOT-416VAR

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2SC5615FB-A 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5615

NPN SILICON RF TRANSISTOR FOR

HIGH-FREQUENCY LOW NOISE

3-PIN LEAD-LESS MINIMOLD

FEATURES

•

1005 package employed (1.0 × 0.5 × 0.5 mm)

NF = 1.4 dB TYP., S^21e²= 12.0 dB TYP. @ V^CE= 3 V, I^C= 7 mA, f = 1 GHz

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5615

50 pcs (Non reel)

10 kpcs/reel

• 8 mm wide embossed taping

• Pin 2 (Base) face the perforation side of the tape

2SC5615-T3

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

1.5

°C

tot ^Note

140

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

T^stg

−65 to +150

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy PCB

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10081EJ02V0DS (2nd edition)

Date Published March 2002 CP(K)

Printed in Japan

The mark • shows major revised points.

NEC Corporation 2001

NEC Compound Semiconductor Devices 2002

12 3 4 5 6 7...31

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