Datasheet > 2SC5616-EB

2SC5616-EB

更新时间： 2024-11-18 21:14:39

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2SC5616-EB 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5616

NPN SILICON RF TRANSISTOR FOR

HIGH-FREQUENCY LOW NOISE AMPLIFIER

3-PIN LEAD-LESS MINIMOLD

FEATURES

•

Low voltage operation, low phase distortion

Ideal for OSC applications

3-pin lead-less minimold package (1005 PKG)

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5616

50 pcs (Non reel)

10 kpcs/reel

• 8 mm wide embossed taping

• Pin 2 (Base) face the perforation side of the tape

2SC5616-T3

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

9.0

Unit

6.0

2.0

100

°C

tot ^Note

140

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

T^stg

−65 to +150

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy PCB

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10047EJ02V0DS (2nd edition)

Date Published December 2001 CP(K)

Printed in Japan

The mark • shows major revised points.

NEC Compound Semiconductor Devices 2001

12 3 4 5 6 7...31

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与2SC5616-EB相关器件

型号	品牌	获取价格	描述	数据表
2SC5616-T3EB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD P
2SC5617	RENESAS	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, LEADLESS
2SC5617(NE685M13)	ETC	获取价格	Discrete
2SC5617-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, LEADLESS
2SC5617EB	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 6V V(BR)CEO \| 30MA I(C) \| SOT-416VAR
2SC5617-EB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, LEADLESS
2SC5617EB-A	RENESAS	获取价格	TRANSISTOR,BJT,NPN,6V V(BR)CEO,30MA I(C),SOT-416VAR
2SC5617EB-T3	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 6V V(BR)CEO \| 30MA I(C) \| SOT-416VAR
2SC5617FB	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 6V V(BR)CEO \| 30MA I(C) \| SOT-416VAR
2SC5617-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, LEADLESS