Datasheet > 2SC5617FB-T3

2SC5617FB-T3

更新时间： 2024-01-01 11:22:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
24页	103K
描述
TRANSISTOR \| BJT \| NPN \| 6V V(BR)CEO \| 30MA I(C) \| SOT-416VAR

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中文翻译

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技术参数
数据手册

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2SC5617FB-T3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
最大集电极电流 (IC)：	0.03 A	配置：	Single
最小直流电流增益 (hFE)：	95	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.14 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

2SC5617FB-T3 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5617

NPN SILICON RF TRANSISTOR FOR

HIGH-FREQUENCY LOW NOISE

3-PIN LEAD-LESS MINIMOLD

FEATURES

•

NF = 1.5 dB TYP. @ V^CE= 3 V, I^C= 3 mA, f = 2 GHz

S^21e²= 11.0 dB TYP. @ V^CE= 3 V, I^C= 10 mA, f = 2 GHz

3-pin lead-less minimold package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5617

50 pcs (Non reel)

10 kpcs/reel

• 8 mm wide embossed taping

• Pin 2 (Base) face the perforation side of the tape

2SC5617-T3

Remark To order evaluation samples, consult your NEC sales representative.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

9.0

6.0

2.0

°C

tot ^Note

140

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

T^stg

−65 to +150

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy PCB

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P15643EJ1V0DS00 (1st edition)

Date Published July 2001 NS CP(K)

Printed in Japan

2001

12 3 4 5 6 7...24

中文翻译

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与2SC5617FB-T3相关器件

型号	品牌	描述	获取价格	数据表
2SC5617FB-T3-A	RENESAS	TRANSISTOR,BJT,NPN,6V V(BR)CEO,30MA I(C),SOT-416VAR	获取价格
2SC5617-T3	NEC	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, LEADLESS	获取价格
2SC5617-T3-A	NEC	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, LEADLESS	获取价格
2SC5617-T3EB	NEC	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, LEADLESS	获取价格
2SC5617-T3EB	RENESAS	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, LEADLESS	获取价格
2SC5617-T3EB-A	NEC	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, LEADLESS	获取价格