Datasheet > 2SC5615-T3FB-A

2SC5615-T3FB-A

更新时间： 2024-02-04 02:54:18

品牌	Logo	应用领域
日电电子 - NEC		ISM频段光电二极管晶体管
页数	文件大小	规格书
31页	124K
描述
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, LEADLESS MINIMOLD PACKAGE-3

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SC5615-T3FB-A 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	LEADLESS MINIMOLD PACKAGE-3	Reach Compliance Code：	compliant
风险等级：	5.64	其他特性：	LOW NOISE
最大集电极电流 (IC)：	0.065 A	基于收集器的最大容量：	0.9 pF
集电极-发射极最大电压：	10 V	配置：	SINGLE
最高频带：	ULTRA HIGH FREQUENCY BAND	JESD-30 代码：	R-PDSO-F3
JESD-609代码：	e6	湿度敏感等级：	1
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	TIN BISMUTH
端子形式：	FLAT	端子位置：	DUAL
处于峰值回流温度下的最长时间：	10	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	7000 MHz	Base Number Matches：	1

2SC5615-T3FB-A 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5615

NPN SILICON RF TRANSISTOR FOR

HIGH-FREQUENCY LOW NOISE

3-PIN LEAD-LESS MINIMOLD

FEATURES

•

1005 package employed (1.0 × 0.5 × 0.5 mm)

NF = 1.4 dB TYP., S^21e²= 12.0 dB TYP. @ V^CE= 3 V, I^C= 7 mA, f = 1 GHz

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5615

50 pcs (Non reel)

10 kpcs/reel

• 8 mm wide embossed taping

• Pin 2 (Base) face the perforation side of the tape

2SC5615-T3

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

1.5

°C

tot ^Note

140

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

T^stg

−65 to +150

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy PCB

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10081EJ01V0DS (1st edition)

The mark • shows major revised points.

(Previous No. P15572EJ1V0DS00)

Date Published January 2002 CP(K)

Printed in Japan

NEC Corporation 2001

NEC Compound Semiconductor Devices 2002

12 3 4 5 6 7...31

中文翻译

下载PDF

与2SC5615-T3FB-A相关器件

型号	品牌	描述	获取价格	数据表
2SC5616-EB	NEC	暂无描述	获取价格
2SC5616-T3EB	NEC	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD P	获取价格
2SC5617	RENESAS	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, LEADLESS	获取价格
2SC5617(NE685M13)	ETC	Discrete	获取价格
2SC5617-A	NEC	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, LEADLESS	获取价格
2SC5617EB	ETC	TRANSISTOR \| BJT \| NPN \| 6V V(BR)CEO \| 30MA I(C) \| SOT-416VAR	获取价格