是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | LEADLESS MINIMOLD PACKAGE-3 | Reach Compliance Code: | compliant |
风险等级: | 5.7 | 其他特性: | LOW NOISE |
最大集电极电流 (IC): | 0.065 A | 基于收集器的最大容量: | 0.9 pF |
集电极-发射极最大电压: | 10 V | 配置: | SINGLE |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-F3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | FLAT |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 7000 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5615-T3EB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil | |
2SC5615-T3FB-A | NEC |
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RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil | |
2SC5616-EB | NEC |
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暂无描述 | |
2SC5616-T3EB | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD P | |
2SC5617 | RENESAS |
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RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, LEADLESS | |
2SC5617(NE685M13) | ETC |
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Discrete | |
2SC5617-A | NEC |
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RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, LEADLESS | |
2SC5617EB | ETC |
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TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 30MA I(C) | SOT-416VAR | |
2SC5617-EB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, LEADLESS | |
2SC5617EB-A | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,6V V(BR)CEO,30MA I(C),SOT-416VAR |