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2SC5614(NE856M13) PDF预览

2SC5614(NE856M13)

更新时间: 2024-11-17 23:20:23
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其他 - ETC /
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31页 126K
描述
Discrete

2SC5614(NE856M13) 数据手册

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DATA SHEET  
NPN SILICON RF TRANSISTOR  
2SC5614  
NPN SILICON RF TRANSISTOR FOR  
HIGH-FREQUENCY LOW NOISE  
3-PIN LEAD-LESS MINIMOLD  
FEATURES  
NF = 1.4 dB TYP., S21e 2 = 10.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz  
3-pin lead-less minimold package  
ORDERING INFORMATION  
Part Number  
Quantity  
Supplying Form  
2SC5614  
50 pcs (Non reel)  
10 kpcs/reel  
• 8 mm wide embossed taping  
• Pin 2 (Base) face the perforation side of the tape  
2SC5614-T3  
Remark To order evaluation samples, contact your nearby sales office.  
The unit sample quantity is 50 pcs.  
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
20  
12  
V
3.0  
V
100  
mA  
mW  
°C  
°C  
P
tot Note  
140  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
Tj  
150  
Tstg  
65 to +150  
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB  
Because this product uses high-frequency technology, avoid excessive static electricity, etc.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PU10080EJ02V0DS (2nd edition)  
Date Published March 2002 CP(K)  
Printed in Japan  
The mark shows major revised points.  
NEC Corporation 2001  
NEC Compound Semiconductor Devices 2002  

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