生命周期: | Contact Manufacturer | 包装说明: | M13, 3 PIN |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.27 |
最大集电极电流 (IC): | 0.1 A | 基于收集器的最大容量: | 1.5 pF |
集电极-发射极最大电压: | 12 V | 配置: | SINGLE |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 4500 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5614(NE856M13) | ETC |
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Discrete | |
2SC5614-A | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
2SC5614EB | ETC |
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TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SMT | |
2SC5614-EB-A | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
2SC5614EB-T3 | ETC |
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TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SMT | |
2SC5614FB | ETC |
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TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SMT | |
2SC5614-FB | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
2SC5614-FB-A | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
2SC5614FB-T3 | ETC |
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TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SMT | |
2SC5614-T3-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic |