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2SC5614 PDF预览

2SC5614

更新时间: 2024-11-06 20:39:43
品牌 Logo 应用领域
CEL /
页数 文件大小 规格书
2页 19K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, M13, 3 PIN

2SC5614 技术参数

生命周期:Contact Manufacturer包装说明:M13, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.27
最大集电极电流 (IC):0.1 A基于收集器的最大容量:1.5 pF
集电极-发射极最大电压:12 V配置:SINGLE
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-F3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):4500 MHzBase Number Matches:1

2SC5614 数据手册

 浏览型号2SC5614的Datasheet PDF文件第2页 
PRELIMINARY DATA SHEET  
NPN SILICON TRANSISTOR NE856M13  
OUTLINE DIMENSIONS (Units in mm)  
FEATURES  
PACKAGE OUTLINE M13  
NEW MINIATURE M13 PACKAGE:  
– Small transistor outline –  
1.0 X 0.5 X 0.5 mm  
+0.1  
+0.1  
0.5  
0.05  
0.3  
0.15  
0.05  
– Low profile / 0.50 mm package height  
– Flat lead style for better RF performance  
1
2
0.35  
LOW NOISE FIGURE:  
NF = 1.4 dB at 1 GHz  
+0.1  
0.05  
+0.1  
0.05  
1.0  
0.7  
3
3
0.2  
0.35  
HIGH COLLECTOR CURRENT:  
IC MAX = 100 mA  
2
1
+0.1  
0.05  
0.15  
0.1  
0.1  
0.2  
DESCRIPTION  
0.2  
Bottom View  
+0.1  
0.05  
The NE856M13 transistor is designed for low cost amplifier  
andoscillatorapplications.Lownoisefigure,highgainandhigh  
current capability equate to wide dynamic range and excellent  
linearity. NEC's new low profile/flat lead style "M13" package  
is ideal for today's portable wireless applications. The NE856  
is also available in chip, Micro-x, and eight different low cost  
plastic surface mount package styles.  
0.5±0.05  
0.125  
PIN CONNECTIONS  
1. Emitter  
2. Base  
3. Collector  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
EIAJ1 REGISTERED NUMBER  
PACKAGE OUTLINE  
NE856M13  
2SC5614  
M13  
SYMBOLS  
PARAMETERS AND CONDITIONS  
UNITS  
MIN  
TYP  
MAX  
fT  
Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz  
Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz  
Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz  
Forward Current Gain at VCE = 3 V, IC = 7 mA  
Collector Cutoff Current at VCB = 10 V, IE = 0  
Emitter Cutoff Current at VEB = 1 V, IC = 0  
GHz  
dB  
3
4.5  
1.4  
10  
NF  
|S21E|2  
2.5  
dB  
7
2
hFE  
80  
145  
1
ICBO  
IEBO  
µA  
µA  
pF  
1
3
CRE  
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz  
0.7  
1.5  
Notes:  
1. Electronic Industrial Association of Japan.  
2. Pulsed measurement, pulse width 350 µs, duty cycle 2 %.  
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.  
California Eastern Laboratories  

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