Datasheet > 2SC5614

2SC5614

更新时间： 2024-11-18 20:39:43

品牌	Logo	应用领域
CEL		/
页数	文件大小	规格书
2页	19K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, M13, 3 PIN

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SC5614 技术参数

生命周期：	Contact Manufacturer	包装说明：	M13, 3 PIN
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.27
最大集电极电流 (IC)：	0.1 A	基于收集器的最大容量：	1.5 pF
集电极-发射极最大电压：	12 V	配置：	SINGLE
最高频带：	ULTRA HIGH FREQUENCY BAND	JESD-30 代码：	R-PDSO-F3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	4500 MHz	Base Number Matches：	1

2SC5614 数据手册

PRELIMINARY DATA SHEET

NPN SILICON TRANSISTOR NE856M13

OUTLINE DIMENSIONS ^{(Units in mm)}

FEATURES

PACKAGE OUTLINE M13

•

NEW MINIATURE M13 PACKAGE:

– Small transistor outline –

1.0 X 0.5 X 0.5 mm

+0.1

0.5

–0.05

0.3

0.15

–0.05

– Low profile / 0.50 mm package height

– Flat lead style for better RF performance

0.35

•

LOW NOISE FIGURE:

NF = 1.4 dB at 1 GHz

+0.1

–0.05

+0.1

–0.05

1.0

0.7

0.2

0.35

HIGH COLLECTOR CURRENT:

IC MAX = 100 mA

+0.1

–0.05

0.15

0.1

0.2

DESCRIPTION

0.2

Bottom View

+0.1

–0.05

The NE856M13 transistor is designed for low cost amplifier

andoscillatorapplications.Lownoisefigure,highgainandhigh

current capability equate to wide dynamic range and excellent

linearity. NEC's new low profile/flat lead style "M13" package

is ideal for today's portable wireless applications. The NE856

is also available in chip, Micro-x, and eight different low cost

plastic surface mount package styles.

0.5±0.05

0.125

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

EIAJ¹REGISTERED NUMBER

PACKAGE OUTLINE

NE856M13

2SC5614

M13

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz

Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz

Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz

Forward Current Gain at VCE = 3 V, IC = 7 mA

Collector Cutoff Current at VCB = 10 V, IE = 0

Emitter Cutoff Current at VEB = 1 V, IC = 0

GHz

4.5

1.4

|S21E|²

2.5

hFE

145

ICBO

IEBO

µA

CRE

Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz

0.7

1.5

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.

California Eastern Laboratories

中文翻译

下载PDF

与2SC5614相关器件

型号	品牌	获取价格	描述	数据表
2SC5614(NE856M13)	ETC	获取价格	Discrete
2SC5614-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5614EB	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 100MA I(C) \| SMT
2SC5614-EB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5614EB-T3	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 100MA I(C) \| SMT
2SC5614FB	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 100MA I(C) \| SMT
2SC5614-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5614-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5614FB-T3	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 100MA I(C) \| SMT
2SC5614-T3-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic

与2SC5614相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

2SC5614

2SC5614 技术参数

2SC5614 数据手册

与2SC5614相关器件

与2SC5614相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SC5614

2SC5614 技术参数

2SC5614 数据手册

与2SC5614相关器件

与2SC5614相关文章

您还可以找

您在本页遇到什么问题？