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2SC5609

更新时间: 2024-11-17 22:52:47
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
1页 48K
描述
Silicon PNP epitaxial planer type

2SC5609 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.84Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):90JESD-30 代码:R-PDSO-F3
元件数量:1端子数量:3
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN最大功率耗散 (Abs):0.1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

2SC5609 数据手册

  
Transistors  
2SC5609  
Silicon PNP epitaxial planer type  
Unit: mm  
For general amplification  
+0.0ꢀ  
–0.02  
+0.0ꢀ  
0.ꢁꢁ  
0.10  
–0.02  
Complementary to 2SA2021  
I Features  
High foward current transfer ratio hFE  
+0.0ꢀ  
1
2
0.2ꢁ  
–0.02  
(0.40)(0.40)  
0.80 0.0ꢀ  
SSS-mini type package, allowing downsizing and thinning of the  
equipment and automatic insertion through the tape packing  
1.20 0.0ꢀ  
ꢀ˚  
I Absolute Maximum Ratings Ta = 25°C  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Rating  
Unit  
V
60  
50  
V
1: Base  
2: Emitter  
3: Collector  
7
200  
V
mA  
mA  
mW  
°C  
SSS Mini Type Package (3-pin)  
IC  
100  
Marking Symbol: 3F  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
100  
Tj  
125  
Tstg  
55 to +125  
°C  
I Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
ICBO  
Conditions  
Min  
Typ  
Max  
0.1  
Unit  
µA  
µA  
V
Collector cutoff current  
VCB = 20 V, IE = 0  
ICEO  
VCE = 10 V, IB = 0  
100  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
VCBO  
VCEO  
VEBO  
hFE1  
IC = 10 µA, IE = 0  
60  
50  
7
IC = 2 mA, IB = 0  
V
IE = 10 µA, IC = 0  
V
Forward current transfer ratio  
VCE = 10 V, IC = 2 mA  
VCE = 2 V, IC = 100 mA  
IC = 100 mA, IB = 10 mA  
VCB = 10 V, IE = 0, f = 1 MHz  
VCB = 10 V, IE = 2 mA, f = 200 MHz  
180  
90  
390  
0.3  
hFE2  
Collector to emitter saturation voltage  
Collector output capacitance  
Transition frequency  
VCE(sat)  
Cob  
0.1  
3.5  
80  
V
pF  
fT  
MHz  
1

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