Datasheet > 2SC5606_1

2SC5606_1

更新时间： 2024-09-15 06:25:11

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管射频
页数	文件大小	规格书
7页	67K
描述
NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

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2SC5606_1 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5606

NPN SILICON RF TRANSISTOR FOR

LOW NOISE · HIGH-GAIN AMPLIFICATION

3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

FEATURES

•

Suitable for high-frequency oscillation

f^T= 25 GHz technology adopted

3-pin ultra super minimold (19, 1608 PKG) package

<R>

ORDERING INFORMATION

Part Number Order Number

Package

Quantity

Supplying Form

2SC5606

2SC5606-A

3-pin ultra super minimold 50 pcs (Non reel)

• 8 mm wide embossed taping

(19, 1608 PKG) (Pb-Free)

3 kpcs/reel

2SC5606-T1 2SC5606-T1-A

• Pin 3 (collector) face the perforation side of

the tape

Remark To order evaluation samples, please contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Ratings

Unit

3.3

1.5

°C

Note

Ptot

Total Power Dissipation

Junction Temperature

Storage Temperature

115

150

Tstg

−65 to +150

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy substrate

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. PU10781EJ01V0DS (1st edition)

(Previous No. P14658EJ3V0DS00)

Date Published August 2009 NS

Printed in Japan

1999, 2009

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4 5 6 7

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与2SC5606_1相关器件

型号	品牌	获取价格	描述	数据表
2SC5606-A	NEC	获取价格	NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIG
2SC5606-A	RENESAS	获取价格	NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
2SC5606-A-YFB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, LEAD FRE
2SC5606-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SU
2SC5606-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SU
2SC5606-T1	RENESAS	获取价格	NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
2SC5606-T1	NEC	获取价格	NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIG
2SC5606-T1-A	NEC	获取价格	NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIG
2SC5606-T1-A	RENESAS	获取价格	NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
2SC5606-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SU