Datasheet > 晶体管 > 射频小信号双极晶体管> 2SC5606-A-YFB

2SC5606-A-YFB

更新时间： 2024-11-06 13:04:19

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管射频
页数	文件大小	规格书
16页	69K
描述
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, LEAD FREE, ULTRA SUPER MINIMOLD, 19, 1608, 3 PIN

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技术参数
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2SC5606-A-YFB 技术参数

生命周期：	Obsolete	包装说明：	LEAD FREE, ULTRA SUPER MINIMOLD, 19, 1608, 3 PIN
Reach Compliance Code：	unknown	风险等级：	5.71
最大集电极电流 (IC)：	0.035 A	基于收集器的最大容量：	0.3 pF
集电极-发射极最大电压：	3.3 V	配置：	SINGLE
最高频带：	L BAND	JESD-30 代码：	R-PDSO-G3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	21000 MHz	Base Number Matches：	1

2SC5606-A-YFB 数据手册

PRELIMINARY DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5606

NPN SILICON RF TRANSISTOR FOR

LOW NOISE · HIGH-GAIN AMPLIFICATION

3-PIN ULTRA SUPER MINIMOLD

FEATURES

•

Suitable for high-frequency oscillation

f^T= 25 GHz technology adopted

3-pin ultra super minimold

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5606

50 pcs (Non reel)

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 3 (collector) face the perforation side of the tape

2SC5606-T1

Remark To order evaluation samples, consult your NEC sales representative (Unit sample quantity is 50 pcs).

ABSOLUTE MAXIMUM RATINGS (T^A= +25 °C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

3.3

1.5

°C

tot^Note

115

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

T^stg

−65 to +150

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy substrate

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P14658EJ2V0DS00 (2nd edition)

Date Published April 2000 NS CP(K)

Printed in Japan

The mark • shows major revised points.

1999, 2000

12 3 4 5 6 7...16

中文翻译

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与2SC5606-A-YFB相关器件

型号	品牌	获取价格	描述	数据表
2SC5606-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SU
2SC5606-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SU
2SC5606-T1	RENESAS	获取价格	NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
2SC5606-T1	NEC	获取价格	NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIG
2SC5606-T1-A	NEC	获取价格	NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIG
2SC5606-T1-A	RENESAS	获取价格	NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
2SC5606-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SU
2SC5606-T1-FB-A	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, 19, 1608, ULTRA SUPER MINIMOLD PAC
2SC5606-T1FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SU
2SC5606-T1YFB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, LEAD FRE

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