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2SC5597 PDF预览

2SC5597

更新时间: 2024-11-19 22:52:47
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
2页 57K
描述
Silicon NPN triple diffusion mesa type(For horizontal deflection output)

2SC5597 技术参数

生命周期:Obsolete零件包装代码:TO-3LA1
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownHTS代码:8541.29.00.95
风险等级:5.84其他特性:HIGH RELIABILITY
最大集电极电流 (IC):22 A集电极-发射极最大电压:600 V
配置:SINGLE最小直流电流增益 (hFE):6
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):200 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

2SC5597 数据手册

 浏览型号2SC5597的Datasheet PDF文件第2页 
Power Transistors  
2SC5597  
Silicon NPN triple diffusion mesa type  
Unit: mm  
For horizontal deflection output  
20.0 0.5  
5.0 0.3  
(3.0)  
φ 3.3 0.2  
I Features  
High breakdown voltage, and high reliability through the use of a  
glass passivation layer  
High-speed switching  
(1.5)  
Wide area of safe operation (ASO)  
(1.5)  
2.0 0.3  
2.7 0.3  
3.0 0.3  
1.0 0.2  
I Absolute Maximum Ratings TC = 25°C  
0.6 0.2  
Parameter  
Symbol  
VCBO  
VCES  
VCEO  
VEBO  
ICP  
Rating  
Unit  
V
5.45 0.3  
10.9 0.5  
Collector to base voltage  
Collector to emitter voltage  
1 700  
1 700  
V
1: Base  
2: Collector  
3: Emitter  
600  
V
1
2
3
Emitter to base voltage  
Peak collector current  
Collector current  
Base current  
7
V
TOP-3L Package  
30  
A
Marking Symbol: C5597  
Internal Connection  
IC  
22  
11  
A
IB  
A
TC = 25°C  
Ta = 25°C  
PC  
200  
W
Collector power  
dissipation  
C
3.5  
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
B
Tstg  
55 to +150  
E
I Electrical Characteristics TC = 25°C 3°C  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
50  
1
Unit  
µA  
Collector cutoff current  
ICBO  
VCB = 1 000 V, IE = 0  
VCB = 1 700 V, IE = 0  
mA  
µA  
Emitter cutoff current  
Forward current transfer ratio  
Collector to emitter saturation voltage  
Base to emitter saturation voltage  
Transition frequency  
IEBO  
hFE  
VEB = 7 V, IC = 0  
50  
12  
3
VCE = 5 V, IC = 11 A  
6
VCE(sat)  
VBE(sat)  
fT  
IC = 11 A, IB = 2.75 A  
IC = 11 A, IB = 2.75 A  
VCE = 10 V, IC = 0.1 A, f = 0.5 MHz  
IC = 11 A, Resistance loaded  
IB1 = 2.75 A, IB2 = −5.5 A  
V
V
1.5  
3
MHz  
µs  
Storage time  
tstg  
3.0  
0.2  
Fall time  
tf  
µs  
1

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