Datasheet > 2SC5603-T1

2SC5603-T1

更新时间： 2024-11-17 23:20:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
24页	96K
描述
TRANSISTOR \| BJT \| NPN \| 6V V(BR)CEO \| 35MA I(C) \| SOT-416VAR

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2SC5603-T1 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5603

NPN SILICON RF TRANSISTOR

FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES

•

High-gain transistor for buffer amplifier : S^21e²= 10.0 dB TYP. @ V^CE= 1 V, I^C= 5 mA, f = 2 GHz

f^T= 25 GHz “UHS0” (Ultra High Speed Process) technology adopted

Flat-lead 3-pin thin-type ultra super minimold package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5603

50 pcs (Non reel)

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 3 (collector) face the perforation side of the tape

2SC5603-T1

Remark To order evaluation samples, consult your NEC sales representative.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

°C

tot ^Note

200

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

T^stg

−65 to +150

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy substrate

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P15323EJ1V0DS00 (1st edition)

Date Published February 2001 NS CP(K)

Printed in Japan

2001

12 3 4 5 6 7...24

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