Datasheet > 2SC5604-T3FB

2SC5604-T3FB

更新时间： 2024-11-20 20:08:19

品牌	Logo	应用领域
日电电子 - NEC		放大器光电二极管晶体管
页数	文件大小	规格书
23页	99K
描述
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD PACKAGE-3

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2SC5604-T3FB 技术参数

生命周期：	Obsolete	包装说明：	MINIMOLD PACKAGE-3
Reach Compliance Code：	unknown	风险等级：	5.84
最大集电极电流 (IC)：	0.035 A	基于收集器的最大容量：	0.5 pF
集电极-发射极最大电压：	6 V	配置：	SINGLE
最高频带：	L BAND	JESD-30 代码：	R-PDSO-F3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	13500 MHz	Base Number Matches：	1

2SC5604-T3FB 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5604

NPN SILICON RF TRANSISTOR FOR

HIGH-FREQUENCY LOW NOISE AMPLIFIER

3-PIN LEAD-LESS MINIMOLD

FEATURES

•

High-gain transistor for buffer amplifier : S^21e²= 10.0 dB TYP. @ V^CE= 1 V, I^C= 5 mA, f = 2 GHz

f^T= 25 GHz “UHS0” (Ultra High Speed Process) technology adopted

3-pin lead-less minimold package (1005 PKG)

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5604

50 pcs (Non reel)

10 kpcs/reel

• 8 mm wide embossed taping

• Pin 2 (Base) face the perforation side of the tape

2SC5604-T3

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

6.0

2.0

°C

tot ^Note

140

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

T^stg

−65 to +150

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy PCB

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10046EJ02V0DS (2nd edition)

Date Published December 2001 CP(K)

Printed in Japan

The mark • shows major revised points.

NEC Compound Semiconductor Devices 2001

12 3 4 5 6 7...23

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与2SC5604-T3FB相关器件

型号	品牌	获取价格	描述	数据表
2SC5606	NEC	获取价格	NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIG
2SC5606	RENESAS	获取价格	NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
2SC5606(NE66219)	ETC	获取价格	Discrete
2SC5606_1	NEC	获取价格	NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIG
2SC5606-A	NEC	获取价格	NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIG
2SC5606-A	RENESAS	获取价格	NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
2SC5606-A-YFB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, LEAD FRE
2SC5606-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SU
2SC5606-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SU
2SC5606-T1	RENESAS	获取价格	NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION

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