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2SC5606 PDF预览

2SC5606

更新时间: 2024-11-17 22:52:47
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管射频
页数 文件大小 规格书
16页 69K
描述
NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD

2SC5606 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.7
其他特性:LOW NOISE最大集电极电流 (IC):0.035 A
基于收集器的最大容量:0.3 pF集电极-发射极最大电压:3.3 V
配置:SINGLE最高频带:L BAND
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):21000 MHz
Base Number Matches:1

2SC5606 数据手册

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PRELIMINARY DATA SHEET  
NPN SILICON RF TRANSISTOR  
2SC5606  
NPN SILICON RF TRANSISTOR FOR  
LOW NOISE · HIGH-GAIN AMPLIFICATION  
3-PIN ULTRA SUPER MINIMOLD  
FEATURES  
Suitable for high-frequency oscillation  
fT = 25 GHz technology adopted  
3-pin ultra super minimold  
ORDERING INFORMATION  
Part Number  
Quantity  
Supplying Form  
2SC5606  
50 pcs (Non reel)  
3 kpcs/reel  
• 8 mm wide embossed taping  
• Pin 3 (collector) face the perforation side of the tape  
2SC5606-T1  
Remark To order evaluation samples, consult your NEC sales representative (Unit sample quantity is 50 pcs).  
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
15  
3.3  
V
1.5  
V
35  
mA  
mW  
°C  
°C  
P
totNote  
115  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
Tj  
150  
Tstg  
65 to +150  
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy substrate  
Because this product uses high-frequency technology, avoid excessive static electricity, etc.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. P14658EJ2V0DS00 (2nd edition)  
Date Published April 2000 NS CP(K)  
Printed in Japan  
The mark shows major revised points.  
1999, 2000  
©

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