生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.7 |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.035 A |
基于收集器的最大容量: | 0.3 pF | 集电极-发射极最大电压: | 3.3 V |
配置: | SINGLE | 最高频带: | L BAND |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 21000 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5606(NE66219) | ETC |
获取价格 |
Discrete | |
2SC5606_1 | NEC |
获取价格 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIG | |
2SC5606-A | NEC |
获取价格 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIG | |
2SC5606-A | RENESAS |
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NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION | |
2SC5606-A-YFB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, LEAD FRE | |
2SC5606-FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SU | |
2SC5606-FB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SU | |
2SC5606-T1 | RENESAS |
获取价格 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION | |
2SC5606-T1 | NEC |
获取价格 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIG | |
2SC5606-T1-A | NEC |
获取价格 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIG |