生命周期: | Obsolete | 包装说明: | MINIMOLD PACKAGE-3 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
最大集电极电流 (IC): | 0.035 A | 基于收集器的最大容量: | 0.5 pF |
集电极-发射极最大电压: | 6 V | 配置: | SINGLE |
最高频带: | L BAND | JESD-30 代码: | R-PDSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 13500 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5604-T3FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD | |
2SC5606 | NEC |
获取价格 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIG | |
2SC5606 | RENESAS |
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NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION | |
2SC5606(NE66219) | ETC |
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Discrete | |
2SC5606_1 | NEC |
获取价格 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIG | |
2SC5606-A | NEC |
获取价格 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIG | |
2SC5606-A | RENESAS |
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NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION | |
2SC5606-A-YFB | NEC |
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RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, LEAD FRE | |
2SC5606-FB | NEC |
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RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SU | |
2SC5606-FB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SU |