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2SC5603 PDF预览

2SC5603

更新时间: 2024-10-31 23:20:23
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
24页 96K
描述
TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 35MA I(C) | SOT-416VAR

2SC5603 数据手册

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DATA SHEET  
NPN SILICON RF TRANSISTOR  
2SC5603  
NPN SILICON RF TRANSISTOR  
FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD  
FEATURES  
High-gain transistor for buffer amplifier : S21e 2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz  
fT = 25 GHz “UHS0” (Ultra High Speed Process) technology adopted  
Flat-lead 3-pin thin-type ultra super minimold package  
ORDERING INFORMATION  
Part Number  
Quantity  
Supplying Form  
2SC5603  
50 pcs (Non reel)  
3 kpcs/reel  
• 8 mm wide embossed taping  
• Pin 3 (collector) face the perforation side of the tape  
2SC5603-T1  
Remark To order evaluation samples, consult your NEC sales representative.  
Unit sample quantity is 50 pcs.  
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
15  
6
V
2
35  
V
mA  
mW  
°C  
°C  
P
tot Note  
200  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
Tj  
150  
Tstg  
65 to +150  
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy substrate  
Because this product uses high-frequency technology, avoid excessive static electricity, etc.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. P15323EJ1V0DS00 (1st edition)  
Date Published February 2001 NS CP(K)  
Printed in Japan  
2001  
©

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