Datasheet > 2SC5602-FB

2SC5602-FB

更新时间： 2024-11-01 18:08:59

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
24页	105K
描述
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3

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2SC5602-FB 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5602

NPN SILICON RF TRANSISTOR FOR

LOW NOISE · HIGH-GAIN AMPLIFICATION

3-PIN ULTRA SUPER MINIMOLD

FEATURES

•

High-gain transistor for buffer amplifier : S^21e²= 10.0 dB TYP. @ f = 2 GHz, V^CE= 1 V, I^C= 5 mA

f^T= 25 GHz “UHS0” (Ultra High Speed Process) technology adopted

3-pin ultra super minimold package (t = 0.75 mm)

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5602

50 pcs (Non reel)

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 3 (collector) face the perforation side of the tape

2SC5602-T1

Remark To order evaluation samples, consult your NEC sales representative (Unit sample quantity is 50 pcs).

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

°C

tot^Note

200

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

T^stg

−65 to +150

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy substrate

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P15146EJ1V0DS00 (1st edition)

Date Published November 2000 NS CP(K)

Printed in Japan

2000

12 3 4 5 6 7...24

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与2SC5602-FB相关器件

型号	品牌	获取价格	描述	数据表
2SC5602-T1	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 6V V(BR)CEO \| 35MA I(C) \| SOT-416
2SC5602-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SU
2SC5603	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 6V V(BR)CEO \| 35MA I(C) \| SOT-416VAR
2SC5603-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, THIN, UL
2SC5603-T1	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 6V V(BR)CEO \| 35MA I(C) \| SOT-416VAR
2SC5603-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, THIN, UL
2SC5604-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD
2SC5604-T3FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD
2SC5606	NEC	获取价格	NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIG
2SC5606	RENESAS	获取价格	NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION