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2SC5594 PDF预览

2SC5594

更新时间: 2024-11-01 06:26:07
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体放大器小信号双极晶体管射频小信号双极晶体管光电二极管
页数 文件大小 规格书
8页 90K
描述
Silicon NPN Epitaxial High Frequency Low Noise Amplifier

2SC5594 技术参数

生命周期:Obsolete包装说明:CMPAK-4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.39最大集电极电流 (IC):0.035 A
基于收集器的最大容量:0.6 pF集电极-发射极最大电压:4.5 V
配置:SINGLE最小直流电流增益 (hFE):60
最高频带:L BANDJESD-30 代码:R-PDSO-G4
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN最大功率耗散 (Abs):0.1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):24000 MHz
Base Number Matches:1

2SC5594 数据手册

 浏览型号2SC5594的Datasheet PDF文件第2页浏览型号2SC5594的Datasheet PDF文件第3页浏览型号2SC5594的Datasheet PDF文件第4页浏览型号2SC5594的Datasheet PDF文件第5页浏览型号2SC5594的Datasheet PDF文件第6页浏览型号2SC5594的Datasheet PDF文件第7页 
2SC5594  
Silicon NPN Epitaxial  
High Frequency Low Noise Amplifier  
REJ03G0749-0200  
(Previous ADE-208-798)  
Rev.2.00  
Aug.10.2005  
Features  
High gain bandwidth product  
fT = 24 GHz typ.  
High power gain and low noise figure ;  
PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz  
Outline  
RENESAS Package code: PTSP0004ZA-A  
(Package name: CMPAK-4)  
2
1. Emitter  
2. Collector  
3. Emitter  
4. Base  
3
1
4
Note: Marking is “XP-”.  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
12  
4.5  
V
0.8  
V
35  
mA  
mW  
°C  
°C  
Collector power dissipation  
Junction temperature  
Pc  
100  
Tj  
150  
Storage temperature  
Tstg  
–55 to +150  
Rev.2.00 Aug 10, 2005 page 1 of 7  

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