生命周期: | Obsolete | 包装说明: | CMPAK-4 |
针数: | 4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.39 | 最大集电极电流 (IC): | 0.035 A |
基于收集器的最大容量: | 0.6 pF | 集电极-发射极最大电压: | 4.5 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 60 |
最高频带: | L BAND | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.1 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 24000 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5594XP-TL-E | RENESAS |
获取价格 |
Silicon NPN Epitaxial High Frequency Low Noise Amplifier | |
2SC5597 | PANASONIC |
获取价格 |
Silicon NPN triple diffusion mesa type(For horizontal deflection output) | |
2SC5599 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 5.5V V(BR)CEO | 100MA I(C) | SC-75 | |
2SC5599-FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPE | |
2SC5599-T1 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 5.5V V(BR)CEO | 100MA I(C) | SC-75 | |
2SC5600 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 5.5V V(BR)CEO | 100MA I(C) | SOT-416VAR | |
2SC5600-FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, THIN, ULTR | |
2SC5600-T1 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 5.5V V(BR)CEO | 100MA I(C) | SOT-416VAR | |
2SC5600-T1FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, THIN, ULTR | |
2SC5602 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 35MA I(C) | SOT-416 |