2SC3932

更新时间： 2024-09-17 22:52:43

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
3页	77K
描述
Silicon NPN epitaxial planer type(For high-frequency amplification / oscillation / mixing)

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2SC3932 数据手册

Transistors

2SC3932

Silicon NPN epitaxial planer type

Unit: mm

For high-frequency amplification / oscillation / mixing

+±.1±

+±.1

–±.±

±.15

±.3

–±.±5

I Features

• High transition frequency f_T

• S-mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

(±.65) (±.65)

1.3±±.1

2.±±±.2

1±°

I Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

1: Base

2: Emitter

3: Collector

EIAJ: SC-70

S-Mini Type Package

°C

Marking Symbol: R

Collector power dissipation

Junction temperature

Storage temperature

P_C

150

T_j

150

T_stg

−55 to +150

I Electrical Characteristics T_a= 25°C 3°C

Parameter

Collector to base voltage

Emitter to base voltage

Forward current transfer ratio

Base to emitter voltage

Transition frequency ^*

Symbol

V_CBO

V_EBO

h_FE

Conditions

Min

Typ

Max

Unit

I_C= 100 µA, I_E= 0

I_E= 10 µA, I_C= 0

V_CB= 10 V, I_E= −2 mA

250

V_BE

f_T

V_CB= 10 V, I_E= −2 mA

720

MHz

V_CB= 10 V, I_E= −15 mA, f = 200 MHz

V_CB= 10 V, I_E= −1 mA, f = 10.7 MHz

V_CE= 6 V, I_C= 0, f = 1 MHz

V_CB= 10 V, I_E= −1 mA, f = 200 MHz

800

1 600

1.5

C_re

Common emitter reverse transfer

capacitance

C_rb

0.8

Power gain

Note) : Rank classification

Rank

No-rank

f_T(MHz)

800 to 1 400 1 000 to 1 600 800 to 1 600

RT RS

Marking symbol

Product of no-rank is not classified and have no indication for rank.

12 3

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