Datasheet > 2SC3934P

2SC3934P

更新时间： 2024-01-18 02:55:08

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Transistor

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2SC3934P 技术参数

生命周期：	Lifetime Buy	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SC3934P 数据手册

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SC3935

Silicon NPN epitaxial planar type

For high-frequency amplification/oscillation/mixing

+0.10

–0.05

+0.1

–0.0

0.15

0.3

■ Features

• High transition frequency f_T

• Small collector output capacitance (Common base, input open cir-

cuited) C_oband reverse transfer capacitance (Common base) C_rb

• S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing

(0.65) (0.65)

1.3 0.1

2.0 0.2

■ Absolute Maximum Ratings T_a= 25°C

10˚

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

1: Base

2: Emitter

3: Collector

EIAJ: SC-70

SMini3-G1 Package

Collector current

I_C

P_C

T_j

°C

Collector power dissipation

Junction temperature

Storage temperature

150

Marking Symbol: 1S

150

T_stg

−55 to +150

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CEO

V_EBO

I_CBO

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio

I_C= 2 mA, I_B= 0

I_E= 10 µA, I_C= 0

V_CB= 10 V, I_E= 0

µA



I_CEO

V_CE= 10 V, I_B= 0

h_FE1

h_FE2

V_CE= 2.4 V, I_C= 7.2 mA

V_CE= 2.4 V, I_C= 100 µA

h_FE2: V_CE= 2.4 V, I_C= 100 µA

h_FE1: V_CE= 2.4 V, I_C= 7.2 mA

220

h_FEratio

∆h_FE

0.75

1.60



Collector-emitter saturation voltage

Transition frequency

V_CE(sat)I_C= 20 mA, I_B= 4 mA

0.5

2.5

1.1

GHz

f_T

V_CB= 4 V, I_E= −7.2 mA, f = 200 MHz

1.4

1.9

0.9

Collector output capacitance

C_ob

V_CB= 4 V, I_E= 0, f = 1 MHz

(Common base, input open circuited)

Reverse transfer capacitance

(Common base)

C_rb

V_CB= 4 V, I_E= 0, f = 1 MHz

0.25

0.35

Collector-base parameter

r_bb' • C_CV_CB= 4 V, I_E= −5 mA, f = 31.9 MHz

11.8

13.5

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. 1: Rank classification

Rank

h_FE

75 to 130

110 to 220

2: ∆h_FE= h_FE2/ h_FE1

Publication date: February 2004

SJC00145CED

12 3

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