5秒后页面跳转
2SC3936 PDF预览

2SC3936

更新时间: 2024-11-24 22:52:43
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
3页 58K
描述
Silicon NPN epitaxial planer type(For high-frequency amplification)

2SC3936 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.82最大集电极电流 (IC):0.03 A
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):70JESD-30 代码:R-PDSO-G3
JESD-609代码:e6湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN BISMUTH
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):230 MHz

2SC3936 数据手册

 浏览型号2SC3936的Datasheet PDF文件第2页浏览型号2SC3936的Datasheet PDF文件第3页 
Transistor  
2SC3936  
Silicon NPN epitaxial planer type  
For high-frequency amplification  
Unit: mm  
2.1±0.1  
0.425  
1.25±0.1  
0.425  
Features  
Optimum for RF amplification, oscillation, mixing, and IF of FM/  
AM radios.  
1
S-Mini type package, allowing downsizing of the equipment and  
3
automatic insertion through the tape packing and the magazine  
packing.  
2
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
30  
0.2±0.1  
20  
V
5
30  
V
1:Base  
2:Emitter  
3:Collector  
EIAJ:SC–70  
S–Mini Type Package  
mA  
mW  
˚C  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
150  
Tj  
150  
Marking symbol : K  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
Conditions  
min  
30  
typ  
max  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Forward current transfer ratio  
Transition frequency  
IC = 10µA, IE = 0  
VCEO  
VEBO  
IC = 2mA, IB = 0  
20  
V
IE = 10µA, IC = 0  
5
V
*
hFE  
V
CE = 10V, IC = 1mA  
70  
250  
fT  
VCB = 10V, IE = –1mA, f = 200MHz  
VCE = 10V, IC = 1mA, f = 10.7MHz  
150  
230  
1.3  
MHz  
pF  
Common emitter reverse transfer capacitance Cre  
*hFE Rank classification  
Rank  
hFE  
B
C
70 ~ 160  
KB  
110 ~ 250  
KC  
Marking Symbol  
1

与2SC3936相关器件

型号 品牌 获取价格 描述 数据表
2SC3936B ETC

获取价格

TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-236VAR
2SC3936C ETC

获取价格

TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-236
2SC3936G PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, ROHS C
2SC3936GB PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, ROHS C
2SC3936GC PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, ROHS C
2SC3936H PANASONIC

获取价格

暂无描述
2SC3936TX PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
2SC3937 PANASONIC

获取价格

Silicon NPN epitaxial planer type(For UHF band low-noise amplification)
2SC3937G PANASONIC

获取价格

RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3937H PANASONIC

获取价格

暂无描述