Datasheet > 2SC3939R

2SC3939R

更新时间： 2024-11-24 23:20:15

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
4页	59K
描述
TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 500MA I(C) \| TO-92

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中文翻译

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数据手册

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2SC3939R 数据手册

Transistor

2SC3939

Silicon NPN epitaxial planer type

For low-frequency driver amplification

Complementary to 2SA1533

Unit: mm

5.0±0.2

4.0±0.2

Features

High collector to emitter voltage V_CEO

■

●

Optimum for the driver stage of a low-frequency and 25 to 30W

output amplifier.

●

Allowing supply with the radial taping.

0.7±0.1

Absolute Maximum Ratings (Ta=25˚C)

■

0.45⁺^–0⁰^.^.¹¹⁵

1.27

0.45⁺^–0⁰^.^.¹¹⁵

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

1.27

1:Emitter

2:Collector

3:Base

TO–92NL Package

2 3

2.54±0.15

I_C

0.5

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

T_j

150

T_stg

–55 ~ +150

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

µA

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CB= 20V, I_E= 0

0.1

V_CBO

V_CEO

V_EBO

I_C= 10µA, I_E= 0

I_C= 100µA, I_B= 0

I_E= 10µA, I_C= 0

h_FE1

h_FE2

_CE= 10V, I_C= 150mA^*2

130

330

Forward current transfer ratio

V_CE= 5V, I_C= 500mA^*2

100

0.2

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= 300mA, I_B= 30mA^*2

V_CB= 10V, I_E= –50mA, f = 200MHz

V_CB= 10V, I_E= 0, f = 1MHz

0.4

1.2

0.85

120

Transition frequency

f_T

MHz

Collector output capacitance

C_ob

^*2Pulse measurement

Rank classification

FE1

Rank

h_FE1

130 ~ 220

185 ~ 330

12 3 4

中文翻译

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