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2SC3944/2SC3944A PDF预览

2SC3944/2SC3944A

更新时间: 2024-01-07 10:29:43
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
3页 63K
描述
2SC3944. 2SC3944A - NPN Transistor

2SC3944/2SC3944A 数据手册

 浏览型号2SC3944/2SC3944A的Datasheet PDF文件第2页浏览型号2SC3944/2SC3944A的Datasheet PDF文件第3页 
Power Transistors  
2SC3944, 2SC3944A  
Silicon NPN epitaxial planar type  
For low-frequency driver and high power amplification  
Unit: mm  
Complementary to 2SA1535 and 2SA1535A  
10.0 0.ꢀ  
5.5 0.ꢀ  
4.ꢀ 0.ꢀ  
ꢀ.7 0.ꢀ  
I Features  
Excelent current IC characteristics of forward current transfer ratio  
FE vs. collector  
φ ꢁ.1 0.1  
h
High transition frequency fT  
A complementary pair with 2SA1535 and 2SA1535A, is optimum  
for the driver-stage of a 60 W to 100 W output amplifier  
Full-pack package which can be installed to the heat sink with one  
screw  
1.ꢁ 0.ꢀ  
1.4 0.1  
+0.ꢀ  
–0.1  
0.5  
0.8 0.1  
I Absolute Maximum Ratings TC = 25°C  
ꢀ.54 0.ꢁ  
5.08 0.5  
Parameter  
Symbol  
Rating  
Unit  
1 : Base  
2 : Collector  
3 : Emitter  
2SC3944  
2SC3944A  
2SC3944  
2SC3944A  
VCBO  
150  
V
Collector to base  
1
ꢀ ꢁ  
voltage  
180  
EIAJ : SC-67  
TO-220F Package  
VCEO  
150  
V
Collector to  
emitter voltage  
180  
Emitter to base voltage  
Peak collector current  
Collector current  
VEBO  
ICP  
IC  
5
V
A
1.5  
1
15  
A
TC = 25°C  
Ta = 25°C  
PC  
W
Collector power  
dissipation  
2.0  
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
55 to +150  
I Electrical Characteristics TC = 25°C  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
10  
Unit  
2SC3944  
2SC3944A  
2SC3944  
2SC3944A  
ICBO  
VCB = 150 V, IE = 0  
VCB = 180 V, IE = 0  
IC = 1 mA, IB = 0  
µA  
Collector cutoff  
current  
10  
VCEO  
150  
180  
5
V
V
Collector to base  
voltage  
Emitter cutoff current  
VEBO  
IE = 10 µA, IC = 0  
*
Forward current transfer ratio  
hFE1  
VCE = 10 V, IC = 150 mA  
VCE = 5 V, IC = 500 mA  
95  
50  
160  
100  
0.5  
1
220  
hFE2  
VCE(sat)  
VBE(sat)  
fT  
Collector to emitter saturation voltage  
Base to emitter saturation voltage  
Transition frequency  
IC = 500 mA, IB = 50 mA  
IC = 500 mA, IB = 50 mA  
VCB = 10 V, IE = 50 mA, f = 10 MHz  
VCB = 10 V, IE = 0, f = 1 MHz  
2
2
V
V
200  
30  
MHz  
pF  
Collector output capacitance  
Cob  
50  
Note) : Rank classification  
*
Rank  
Q
R
hFE1  
95 to 155  
130 to 220  
1

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