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2SC3941P PDF预览

2SC3941P

更新时间: 2024-11-10 23:20:15
品牌 Logo 应用领域
其他 - ETC 晶体晶体管放大器
页数 文件大小 规格书
4页 59K
描述
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 70MA I(C) | TO-92

2SC3941P 数据手册

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Transistor  
2SC3941  
Silicon NPN triple diffusion planer type  
For high breakdown voltage general amplification  
For small TV video output  
Unit: mm  
5.0±0.2  
4.0±0.2  
Complementary to 2SB1221  
Features  
High collector to emitter voltage VCEO  
.
High transition frequency fT.  
Allowing supply with the radial taping.  
0.7±0.1  
Absolute Maximum Ratings (Ta=25˚C)  
+0.15  
0.45  
–0.1  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
Unit  
V
0.45+00..115  
1.27  
1.27  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
300  
300  
V
7
V
1:Emitter  
2:Collector  
3:Base  
TO–92NL Package  
1
2 3  
100  
mA  
mA  
W
2.54±0.15  
IC  
70  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
1
Tj  
150  
˚C  
˚C  
Tstg  
–55 ~ +150  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
Unit  
µA  
V
Collector cutoff current  
VCB = 100V, IE = 0  
C = 100µA, IB = 0  
2
Collector to emitter voltage  
Emitter to base voltage  
VCEO  
VEBO  
I
300  
7
IE = 1µA, IC = 0  
V
*
Forward current transfer ratio  
hFE  
VCB = 10V, IC = 5mA  
30  
220  
1.2  
Collector to emitter saturation voltage VCE(sat)  
IC = 50mA, IB = 5mA  
V
MHz  
pF  
Transition frequency  
fT  
VCB = 10V, IE = –10mA, f = 200MHz  
VCB = 10V, IE = 0, f = 1MHz  
50  
80  
4
Collector output capacitance  
Cob  
8
*hFE Rank classification  
Rank  
hFE  
P
Q
R
30 ~ 100  
60 ~ 150  
100 ~ 220  
1

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