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2SC3940/2SC3940A PDF预览

2SC3940/2SC3940A

更新时间: 2024-09-22 23:20:15
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
4页 60K
描述
2SC3940. 2SC3940A - NPN Transistor

2SC3940/2SC3940A 数据手册

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Transistor  
2SC3940, 2SC3940A  
Silicon NPN epitaxial planer type  
For low-frequency output amplification and driver amplification  
Complementary to 2SA1534 and 2SA1534A  
Unit: mm  
5.0±0.2  
4.0±0.2  
Features  
Low collector to emitter saturation voltage VCE(sat)  
.
Allowing supply with the radial taping.  
0.7±0.1  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
2SC3940  
Symbol  
Ratings  
Unit  
Collector to  
30  
VCBO  
V
base voltage  
Collector to  
2SC3940A  
2SC3940  
60  
0.45+00..115  
1.27  
0.45+00..115  
25  
1.27  
VCEO  
V
2SC3940A  
emitter voltage  
50  
Emitter to base voltage  
Peak collector current  
Collector current  
VEBO  
ICP  
IC  
5
V
A
1:Emitter  
2:Collector  
3:Base  
1
2 3  
1.5  
2.54±0.15  
1
A
TO–92NL Package  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
1
W
˚C  
˚C  
Tj  
150  
Tstg  
–55 ~ +150  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
Unit  
Collector cutoff current  
VCB = 20V, IE = 0  
0.1  
µA  
Collector to base  
voltage  
2SC3940  
2SC3940A  
30  
60  
25  
50  
5
VCBO  
IC = 10µA, IE = 0  
V
Collector to emitter 2SC3940  
VCEO  
VEBO  
IC = 2mA, IB = 0  
V
V
voltage  
2SC3940A  
Emitter to base voltage  
IE = 10µA, IC = 0  
*1  
hFE1  
hFE2  
VCE = 10V, IC = 500mA*2  
VCE = 5V, IB = 1A*2  
85  
50  
340  
Forward current transfer ratio  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
IC = 500mA, IB = 50mA*2  
IB = 500mA, Ia = 50mA*2  
VCB = 10V, IE = –50mA, f = 200MHz  
VCB = 10V, IE = 0, f = 1MHz  
0.2  
0.85  
200  
11  
0.4  
1.2  
V
V
Transition frequency  
fT  
MHz  
pF  
Collector output capacitance  
Cob  
20  
*2 Pulse measurement  
*1  
h
Rank classification  
FE1  
Rank  
hFE1  
Q
R
S
85 ~ 170  
120 ~ 240  
170 ~ 340  
1

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