2SC3937H

更新时间： 2024-11-25 13:04:15

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
2页	40K
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中文翻译

获取价格

数据手册

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2SC3937H 数据手册

Transistor

2SC3937

Silicon NPN epitaxial planer type

For UHF band low-noise amplification

Unit: mm

2.1±0.1

0.425

1.25±0.1

0.425

Features

Low noise figure NF.

■

●

High gain.

●

High transition frequency f_T.

●

S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

0.2±0.1

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

1:Base

2:Emitter

3:Collector

EIAJ:SC–70

S–Mini Type Package

˚C

Collector power dissipation

Junction temperature

Storage temperature

P_C

150

Marking symbol : 2W

T_j

150

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

µA

Collector cutoff current

Emitter cutoff current

V_CB= 15V, I_E= 0

I_EBO

h_FE1

h_FE2

f_T

V_EB= 1V, I_C= 0

µA

V_CE= 8V, I_C= 20mA

V_CE= 1V, I_C= 3mA

150

300

280

Forward current transfer ratio

Transition frequency

_CE= 8V, I_C= 20mA, f = 800MHz

0.7

GHz

Collector output capacitance

Noise figure

C_ob

V_CE= 10V, I_E= 0, f = 1MHz

1.2

1.7

V_CE= 8V, I_C= 7mA, f = 800MHz

Maximum unilateral power gain

Foward transfer gain

GUM

_CE= 8V, I_C= 20mA, f = 800MHz

| S_21e

V_CE= 8V, I_C= 20mA, f = 800MHz

中文翻译

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