2SC3938G-Q

更新时间： 2024-11-11 13:00:39

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中文翻译

获取价格

数据手册

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2SC3938G-Q 数据手册

Transistor

2SC3938

Silicon NPN epitaxial planer type

For high speed switching

Unit: mm

2.1±0.1

0.425

1.25±0.1

0.425

Features

High-speed switching.

■

●

Low collector to emitter saturation voltage V_CE(sat)

●

S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

●

Allowing pair use with 2SA1739.

Absolute Maximum Ratings (Ta=25˚C)

■

0.2±0.1

Parameter

Symbol

V_CBO

V_CES

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

1:Base

2:Emitter

3:Collector

EIAJ:SC–70

S–Mini Type Package

300

˚C

I_C

100

Marking symbol : 2Y

Collector power dissipation

Junction temperature

Storage temperature

P_C

150

T_j

150

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

0.1

Unit

µA

Collector cutoff current

Emitter cutoff current

V_CB= 40V, I_E= 0

I_EBO

V_EB= 4V, I_C= 0

0.1

µA

Forward current transfer ratio

h_FE

V_CE= 1V, I_C= 10mA

200

0.25

1.0

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= 10mA, I_B= 1mA

0.17

I_C= 10mA, I_B= 1mA

Transition frequency

Collector output capacitance

Turn-on time

f_T

V_CB= 10V, I_E= –10mA, f = 200MHz

V_CB= 10V, I_E= 0, f = 1MHz

450

MHz

C_ob

t_on

t_off

t_stg

Turn-off time

Refer to the measurment circuit

Storage time

^*h_FERank classification

Rank

h_FE

60 ~ 120

2YQ

90 ~ 200

2YR

Marking Symbol

中文翻译

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