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2SC3938G-Q PDF预览

2SC3938G-Q

更新时间: 2024-01-17 13:54:29
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
2页 45K
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2SC3938G-Q 数据手册

 浏览型号2SC3938G-Q的Datasheet PDF文件第2页 
Transistor  
2SC3938  
Silicon NPN epitaxial planer type  
For high speed switching  
Unit: mm  
2.1±0.1  
0.425  
1.25±0.1  
0.425  
Features  
High-speed switching.  
1
Low collector to emitter saturation voltage VCE(sat)  
.
S-Mini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing and the magazine  
packing.  
3
2
Allowing pair use with 2SA1739.  
Absolute Maximum Ratings (Ta=25˚C)  
0.2±0.1  
Parameter  
Symbol  
VCBO  
VCES  
VEBO  
ICP  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
40  
40  
V
1:Base  
2:Emitter  
3:Collector  
5
V
EIAJ:SC–70  
S–Mini Type Package  
300  
mA  
mA  
mW  
˚C  
IC  
100  
Marking symbol : 2Y  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
150  
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
0.1  
Unit  
µA  
Collector cutoff current  
Emitter cutoff current  
VCB = 40V, IE = 0  
IEBO  
VEB = 4V, IC = 0  
0.1  
µA  
*
Forward current transfer ratio  
hFE  
VCE = 1V, IC = 10mA  
60  
200  
0.25  
1.0  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
IC = 10mA, IB = 1mA  
0.17  
V
V
IC = 10mA, IB = 1mA  
Transition frequency  
Collector output capacitance  
Turn-on time  
fT  
VCB = 10V, IE = –10mA, f = 200MHz  
VCB = 10V, IE = 0, f = 1MHz  
450  
2
MHz  
pF  
ns  
Cob  
ton  
toff  
tstg  
6
17  
17  
10  
Turn-off time  
Refer to the measurment circuit  
ns  
Storage time  
ns  
*hFE Rank classification  
Rank  
hFE  
Q
R
60 ~ 120  
2YQ  
90 ~ 200  
2YR  
Marking Symbol  
1

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