2SC3936H

更新时间： 2024-09-23 13:04:19

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松下 - PANASONIC		/
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中文翻译

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数据手册

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2SC3936H 数据手册

Transistor

2SC3936

Silicon NPN epitaxial planer type

For high-frequency amplification

Unit: mm

2.1±0.1

0.425

1.25±0.1

0.425

Features

■

●

Optimum for RF amplification, oscillation, mixing, and IF of FM/

AM radios.

●

S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

0.2±0.1

1:Base

2:Emitter

3:Collector

EIAJ:SC–70

S–Mini Type Package

˚C

Collector power dissipation

Junction temperature

Storage temperature

P_C

150

T_j

150

Marking symbol : K

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

V_CBO

Conditions

min

typ

max

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Transition frequency

I_C= 10µA, I_E= 0

V_CEO

V_EBO

I_C= 2mA, I_B= 0

I_E= 10µA, I_C= 0

h_FE

_CE= 10V, I_C= 1mA

250

f_T

V_CB= 10V, I_E= –1mA, f = 200MHz

V_CE= 10V, I_C= 1mA, f = 10.7MHz

150

230

1.3

MHz

Common emitter reverse transfer capacitance C_re

^*h_FERank classification

Rank

h_FE

70 ~ 160

110 ~ 250

Marking Symbol

12 3

中文翻译

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