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2SC3936B PDF预览

2SC3936B

更新时间: 2024-11-24 23:20:15
品牌 Logo 应用领域
其他 - ETC 晶体晶体管光电二极管放大器
页数 文件大小 规格书
4页 68K
描述
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-236VAR

2SC3936B 数据手册

 浏览型号2SC3936B的Datasheet PDF文件第2页浏览型号2SC3936B的Datasheet PDF文件第3页浏览型号2SC3936B的Datasheet PDF文件第4页 
Transistor  
2SC3936  
Silicon NPN epitaxial planer type  
For high-frequency amplification  
Unit: mm  
2.1±0.1  
0.425  
1.25±0.1  
0.425  
Features  
Optimum for RF amplification, oscillation, mixing, and IF of FM/  
AM radios.  
1
S-Mini type package, allowing downsizing of the equipment and  
3
automatic insertion through the tape packing and the magazine  
packing.  
2
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
30  
0.2±0.1  
20  
V
5
30  
V
1:Base  
2:Emitter  
3:Collector  
EIAJ:SC–70  
S–Mini Type Package  
mA  
mW  
˚C  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
150  
Tj  
150  
Marking symbol : K  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
Conditions  
min  
30  
typ  
max  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Forward current transfer ratio  
Transition frequency  
IC = 10µA, IE = 0  
VCEO  
VEBO  
IC = 2mA, IB = 0  
20  
V
IE = 10µA, IC = 0  
5
V
*
hFE  
V
CE = 10V, IC = 1mA  
70  
250  
fT  
VCB = 10V, IE = –1mA, f = 200MHz  
VCE = 10V, IC = 1mA, f = 10.7MHz  
150  
230  
1.3  
MHz  
pF  
Common emitter reverse transfer capacitance Cre  
*hFE Rank classification  
Rank  
hFE  
B
C
70 ~ 160  
KB  
110 ~ 250  
KC  
Marking Symbol  
1

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