5秒后页面跳转
2SC3935GP PDF预览

2SC3935GP

更新时间: 2024-09-18 20:58:19
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
3页 234K
描述
Small Signal Bipolar Transistor, 0.05A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN

2SC3935GP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.83
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:10 V
配置:SINGLE最小直流电流增益 (hFE):75
JESD-30 代码:R-PDSO-F3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):1900 MHz
Base Number Matches:1

2SC3935GP 数据手册

 浏览型号2SC3935GP的Datasheet PDF文件第2页浏览型号2SC3935GP的Datasheet PDF文件第3页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
Transistors  
2SC3935  
Silicon NPN epitaxial planar type  
For high-frequency amplification/oscillation/mixing  
+0.10  
–0.05  
+0.1  
–0.0  
0.15  
0
Features  
3
High transition frequency fT  
Small collector output capacitance (Common base, input opecir-  
cuited) Cob and reverse transfer capacitance (Common base) Crb  
S-Mini type package, allowing downsizing of the equipmnt ad  
automatic insertion through the tape packing  
1
5) (0.65)  
1.3 1  
2.0.2  
Absolute Maximum Ratings Ta = 2°C  
10˚  
Parameter  
Symbol  
Unit  
V
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) EO  
Emitter-base voltage (CollectoVEBO  
15  
10  
V
1: Base  
2: Emitter  
3: Collector  
3
EIAJ: SC-70  
SMini3-G1 Package  
Collector current  
IC  
PC  
Tj  
mA  
mW  
°C  
°C  
Collector power dissipation  
Junction temperatre  
Storage temperate  
150  
Marking Symbol: 1S  
150  
T
55 to +150  
ElectriCharacteristics Ta 3°C  
arameter  
Symbol  
VCEO  
VEBO  
ICBO  
Conditions  
Min  
10  
Typ  
Max  
Unit  
V
Colctor-emitter voltage (Base on)  
mitter-base voltage Coector pen)  
Collectorutoff crrent (Emiter open)  
Coloff curnt (Base open)  
Forwnsfer ratio  
IC = 2 mA, IB = 0  
IE = 10 µA, IC = 0  
V
VCB = 10 V, IE = 0  
1
µA  
µA  
ICEO  
VCE = 10 V, IB = 0  
10  
1
*
hFE1  
hFE2  
VCE = 2.4 V, IC = 7.2 mA  
VCE = 2.V, IC = 100 µA  
hFE2: VCE = 2.4 V, IC = 100 µA  
hFE1: VCE = 2.4 V, C = 7.2 mA  
75  
75  
220  
2
*
hFE ratio  
hFE  
0.75  
1.60  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = 20 mA, IB = 4 mA  
0.5  
2.5  
1.1  
V
GHz  
pF  
fT  
VCB = 4 V, IE = −7.2 mA, f = 200 MHz  
1.4  
1.9  
0.9  
Collector output capacitance  
Cob  
VCB = 4 V, IE = 0, f = 1 MHz  
(Common base, input open circuited)  
Reverse transfer capacitance  
(Common base)  
Crb  
VCB = 4 V, IE = 0, f = 1 MHz  
0.25  
0.35  
pF  
Collector-base parameter  
rbb' • CC VCB = 4 V, IE = −5 mA, f = 31.9 MHz  
11.8  
13.5  
ps  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. 1: Rank classification  
*
Rank  
P
Q
hFE  
75 to 130  
110 to 220  
2: hFE = hFE2 / hFE1  
*
Publication date: February 2004  
SJC00145CED  
1

与2SC3935GP相关器件

型号 品牌 获取价格 描述 数据表
2SC3935G-P PANASONIC

获取价格

暂无描述
2SC3935GQ PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.05A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, ROHS C
2SC3935H PANASONIC

获取价格

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3935P ETC

获取价格

TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 50MA I(C) | TO-236VAR
2SC3935Q ETC

获取价格

TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 50MA I(C) | TO-236
2SC3935TX PANASONIC

获取价格

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3936 PANASONIC

获取价格

Silicon NPN epitaxial planer type(For high-frequency amplification)
2SC3936 KEXIN

获取价格

Silicon NPN Epitaxial Planar
2SC3936 TYSEMI

获取价格

Optimum for RF amplification, oscillation, mixing, and IF of FM/AM radios.
2SC3936B ETC

获取价格

TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-236VAR