2SC3935G-P

更新时间： 2024-01-31 22:03:00

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中文翻译

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数据手册

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2SC3935G-P 数据手册

Transistor

2SC3935

Silicon NPN epitaxial planer type

For high-frequency amplification/oscillation/mixing

Unit: mm

2.1±0.1

0.425

1.25±0.1

0.425

Features

High transition frequency f_T.

■

●

Small collector output capacitance C_oband common base reverse

transfer capacitance C_rb.

●

S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

0.2±0.1

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

1:Base

2:Emitter

3:Collector

EIAJ:SC–70

S–Mini Type Package

˚C

Collector power dissipation

Junction temperature

Storage temperature

P_C

150

T_j

150

Marking symbol : 1S

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

µA

V_CB= 10V, I_E= 0

Collector cutoff current

I_CEO

V_CEO

V_EBO

h_FE1

V_CE= 10V, I_B= 0

I_C= 2mA, I_B= 0

I_E= 10µA, I_C= 0

Collector to emitter voltage

Emitter to base voltage

_CE= 2.4V, I_C= 7.2mA

220

Forward current transfer ratio

h_FE2

V_CE= 2.4V, I_C= 100µA

Collector to emitter saturation voltage V_CE(sat)

I_C= 20mA, I_B= 4mA

0.5

2.5

GHz

Transition frequency

f_T

V_CE= 2.4V, I_C= 7.2mA, f = 200MHz

V_CB= 4V, I_E= 0, f = 1MHz

1.4

1.9

0.9

Collector output capacitance

C_ob

1.1

Common emitter reverse transfer capacitance C_rb

0.25

11.8

0.35

13.5

Base time constant

r_bb' · C_C

V_CB= 4V, I_E= –5mA, f = 31.9MHz

V_CE= 2.4V, I_C= 100µA

h_FEratio

h_FE(RATIO)

0.75

1.6

V_CE= 2.4V, I_C= 7.2mA

Rank classification

Rank

h_FE

75 ~ 130

110 ~ 220

中文翻译

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