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2SC3934H PDF预览

2SC3934H

更新时间: 2024-02-13 09:40:23
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
3页 49K
描述
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

2SC3934H 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.83
Is Samacsys:N最大集电极电流 (IC):0.03 A
集电极-发射极最大电压:12 V配置:SINGLE
最小直流电流增益 (hFE):40最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):4500 MHzBase Number Matches:1

2SC3934H 数据手册

 浏览型号2SC3934H的Datasheet PDF文件第2页浏览型号2SC3934H的Datasheet PDF文件第3页 
Transistor  
2SC3934  
Silicon NPN epitaxial planer type  
For high-frequency wide-band low-noise amplification  
Unit: mm  
2.1±0.1  
0.425  
1.25±0.1  
0.425  
Features  
High transition frequency fT.  
1
S-Mini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing and the magazine  
packing.  
3
2
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
15  
12  
0.2±0.1  
V
2.5  
V
50  
mA  
mA  
mW  
˚C  
1:Base  
2:Emitter  
3:Collector  
EIAJ:SC–70  
S–Mini Type Package  
IC  
30  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
150  
Marking symbol : 1U  
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
100  
1
Unit  
µA  
Collector cutoff current  
Emitter cutoff current  
Forward current transfer ratio  
Transition frequency  
VCB = 10V, IE = 0  
VEB = 2V, IC = 0  
CE = 10V, IC = 10mA  
IEBO  
hFE  
fT  
µA  
V
40  
VCE = 10V, IC = 10mA, f = 800MHz  
VCB = 10V, IE = 0, f = 1MHz  
4.5  
GHz  
pF  
Collector output capacitance  
Foward transfer gain  
Cob  
| S21e  
1.2  
2.5  
2
|
VCE = 10V, IC = 20mA, f = 800MHz  
VCE = 10V, IC = 20mA, f = 800MHz  
VCE = 10V, IC = 5mA, f = 800MHz  
9
12  
14  
dB  
Maximum unilateral power gain  
Noise figure  
GUM  
NF  
12  
dB  
1.3  
dB  
1

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