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2SC3419_04 PDF预览

2SC3419_04

更新时间: 2024-11-04 07:30:43
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器功率放大器
页数 文件大小 规格书
4页 123K
描述
Medium-Power Amplifier Applications

2SC3419_04 数据手册

 浏览型号2SC3419_04的Datasheet PDF文件第2页浏览型号2SC3419_04的Datasheet PDF文件第3页浏览型号2SC3419_04的Datasheet PDF文件第4页 
2SC3419  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
2SC3419  
Medium-Power Amplifier Applications.  
Unit: mm  
Low saturation voltage: V  
= 0.25 V (typ.)  
(I = 500 mA, I = 50 mA)  
CE (sat)  
C
B
High collector power dissipation: P = 1.2 W (Ta = 25°C)  
C
Complementary to 2SA1356  
Maximum Ratings  
(Tc = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
40  
V
V
CBO  
CEO  
EBO  
40  
5
V
I
800  
mA  
mA  
C
Base current  
I
B
80  
1.2  
Ta = 25°C  
Tc = 25°C  
Collector power  
dissipation  
P
W
C
5
JEDEC  
JEITA  
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
stg  
55 to 150  
TOSHIBA  
2-8H1A  
Weight: 0.82 g (typ.)  
Electrical Characteristics (Tc = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 40 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
I
I
V
V
40  
1.0  
1.0  
µA  
µA  
V
CBO  
CB  
E
Emitter cut-off current  
= 5 V, I = 0  
C
EBO  
EB  
Collector-emitter breakdown voltage  
V
I = 10 mA, I = 0  
C B  
CEO  
h
FE (1)  
V
V
= 2 V, I = 50 mA  
70  
240  
CE  
C
DC current gain  
(Note)  
h
= 2 V, I = 0.8 A  
13  
50  
60  
0.25  
0.90  
100  
10  
0.8  
1.1  
FE (2)  
CE  
C
Collector-emitter saturation voltage  
Base-emitter voltage  
V
I
C
= 500 mA, I = 50 mA  
V
V
CE (sat)  
B
V
BE  
V
CE  
V
CE  
V
CB  
= 2 V, I = 500 mA  
C
Transition frequency  
f
= 2 V, I = 0.5 A  
MHz  
pF  
T
C
Collector output capacitance  
C
ob  
= 10 V, I = 0, f = 1 MHz  
E
Note: h  
FE (1)  
classification O: 70 to 140, Y: 120 to 240  
1
2004-07-07  

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