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2SC3420Y PDF预览

2SC3420Y

更新时间: 2024-11-03 19:52:55
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
1页 689K
描述
Transistor

2SC3420Y 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.59
Is Samacsys:NBase Number Matches:1

2SC3420Y 数据手册

  
2SC3420  
Plastic-Encapsulate Transistors  
NPN  
TO-126C  
Features  
Power dissipation  
PCM:  
1.5  
W (Tamb=25)  
Collector current  
ICM:  
5
A
Collector-base voltage  
V(BR)CBO  
:
50  
V
Operating and storage junction temperature range  
1. EMITTER 2. COLLECTOR 3. BASE  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic=100µA, IE=0  
Ic=10mA, IB=0  
IE=100µA, IC=0  
VCB=40V, IE=0  
VEB=8V, IC=0  
MIN  
50  
20  
8
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
µA  
µA  
0.1  
0.1  
600  
IEBO  
Emitter cut-off current  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE  
VCE=2V, IC=0.5A  
140  
70  
DC current gain  
VCE=2V, IC=4A  
IC=4A, IB=0.1A  
V
V
Collector-emitter saturation voltage  
Base-emitter voltage  
1
VCE=2V, IC=4A  
1.5  
MHz  
pF  
Transition frequency  
fT  
VCE=2V, IC=0.5A  
100  
40  
Cob  
Collector output capacitance  
V
CB=10V, IE=0, f=1MHz  
CLASSIFICATION OF hFE(1)  
Rank  
Y
GR  
BL  
300-600  
Range  
140-240  
200-400  
Marking  

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