Datasheet > 2SC3422-O

2SC3422-O

更新时间： 2024-01-01 22:32:00

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	145K
描述
TRANSISTOR 3 A, 40 V, NPN, Si, POWER TRANSISTOR, 2-8H1A, 3 PIN, BIP General Purpose Power

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2SC3422-O 数据手册

2SC3422

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC3422

Audio Frequency Power Amplifier

Low-Speed Switching

Unit: mm

•

Suitable for the output stage of 5-watt car radios and car stereos.

Good h linearity

Complementary to 2SA1359.

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

1.5

Ta = 25°C

Tc = 25°C

Collector power

dissipation

JEDEC

JEITA

―

Junction temperature

150

°C

Storage temperature range

stg

−55 to 150

TOSHIBA

2-8H1A

Note1: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 0.82 g (typ.)

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2009-12-21

12 3 4

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