Datasheet > 2SC3437

2SC3437

更新时间： 2024-09-21 12:53:39

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	93K
描述
High transition frequency: fT = 400 MHz (typ). Low saturation voltage: VCE (sat) = 0.3 V (max).

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC3437 数据手册

Product specification

2SC3437

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

High transition frequency: f^T= 400 MHz (typ).

Low saturation voltage: V^{CE (sat)}= 0.3 V (max).

High speed switching time: tstg = 15 ns (typ).

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

200

Base current

I^B

Collector power dissipation

Junction temperature

Storage temperature range

P^C

150

125

T^stg

-55 to +125

http://www.twtysemi.com

1 of 2

sales@twtysemi.com

4008-318-123

中文翻译

下载PDF

与2SC3437相关器件

型号	品牌	获取价格	描述	数据表
2SC3437_07	TOSHIBA	获取价格	Silicon NPN Epitaxial Type (PCT process) Ultra High Speed Switching Applications
2SC3437O	CJ	获取价格	Transistor
2SC3437-O	TOSHIBA	获取价格	TRANSISTOR 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, S-MINI, SC-59,
2SC3437OTE85R	TOSHIBA	获取价格	TRANSISTOR 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
2SC3437R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 15V V(BR)CEO \| 200MA I(C) \| SC-59
2SC3437-R	TOSHIBA	获取价格	暂无描述
2SC3437RTE85L	TOSHIBA	获取价格	TRANSISTOR 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
2SC3437TE85R	TOSHIBA	获取价格	TRANSISTOR 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
2SC3437Y	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 15V V(BR)CEO \| 200MA I(C) \| SC-59
2SC3437YTE85L	TOSHIBA	获取价格	TRANSISTOR 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma