2SC3423Y

更新时间： 2024-09-21 12:54:27

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体音频放大器晶体管功率双极晶体管局域网
页数	文件大小	规格书
5页	127K
描述
Audio Frequency Amplifier Applications

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中文翻译

获取价格

技术参数
数据手册

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2SC3423Y 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-PSFM-T3
针数：	3	Reach Compliance Code：	unknown
风险等级：	5.77	Is Samacsys：	N
最大集电极电流 (IC)：	0.05 A	集电极-发射极最大电压：	150 V
配置：	SINGLE	最小直流电流增益 (hFE)：	120
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	NO	端子面层：	NOT SPECIFIED
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	200 MHz	Base Number Matches：	1

2SC3423Y 数据手册

2SC3423

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC3423

Audio Frequency Amplifier Applications

Unit: mm

•

Complementary to 2SA1360

Small collector output capacitance: C = 1.8 pF (typ.)

High transition frequency: f = 200 MHz (typ.)

Absolute Maximum Ratings (Tc = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

150

Collector-emitter voltage

Emitter-base voltage

Collector current

150

Base current

Ta = 25°C

Tc = 25°C

1.2

Collector power

dissipation

Junction temperature

150

°C

JEDEC

JEITA

―

Storage temperature range

stg

−55 to 150

TOSHIBA

2-8H1A

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

Weight: 0.82 g (typ.)

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2006-11-09

12 3 4 5

中文翻译

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与2SC3423Y相关器件

型号	品牌	获取价格	描述	数据表
2SC3423-Y	TOSHIBA	获取价格	Audio Frequency Amplifier Applications
2SC3424	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 250V V(BR)CEO \| 50MA I(C) \| TO-126VAR
2SC3425	TOSHIBA	获取价格	TRANSISTOR SILICON NPN DIFFUSED TYPE (PCT PROCESS)
2SC3425_06	TOSHIBA	获取价格	Silicon NPN Triple Diffused Type (PCT Process)
2SC3426	TOSHIBA	获取价格	NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC
2SC3429	TYSEMI	获取价格	Low Noise Figure NF=1.5dB,\|S21e\|2=16dB(f=500MHz) NF=1.5dB,\|S21e\| =10.5dB(f=1GHz)
2SC3429	TOSHIBA	获取价格	NPN EPITAXIAL PLANAR TYPE (VHF ~ UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
2SC3429	KEXIN	获取价格	Silicon NPN Epitaxial Planar Type
2SC3437	TOSHIBA	获取价格	NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING, COMPUTER, COUNTER APPLICATIONS)
2SC3437	CJ	获取价格	Transistor