5秒后页面跳转
2SC3437RTE85L PDF预览

2SC3437RTE85L

更新时间: 2024-01-03 05:36:14
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
5页 231K
描述
TRANSISTOR 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal

2SC3437RTE85L 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.71
Is Samacsys:N最大集电极电流 (IC):0.2 A
基于收集器的最大容量:6 pF集电极-发射极最大电压:15 V
配置:SINGLE最小直流电流增益 (hFE):20
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):400 MHz
VCEsat-Max:0.3 VBase Number Matches:1

2SC3437RTE85L 数据手册

 浏览型号2SC3437RTE85L的Datasheet PDF文件第2页浏览型号2SC3437RTE85L的Datasheet PDF文件第3页浏览型号2SC3437RTE85L的Datasheet PDF文件第4页浏览型号2SC3437RTE85L的Datasheet PDF文件第5页 
2SC3437  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)  
2SC3437  
Ultra High Speed Switching Applications  
Unit: mm  
Computer, Counter Applications  
High transition frequency: f = 400 MHz (typ.)  
T
Low saturation voltage: V  
= 0.3 V (max)  
= 15 ns (typ.)  
CE (sat)  
High speed switching time: t  
stg  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
40  
15  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
5
V
I
200  
40  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
150  
125  
55~125  
C
JEDEC  
JEITA  
TO-236MOD  
T
j
T
stg  
SC-59  
TOSHIBA  
2-3F1A  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
Weight: 0.012 g (typ.)  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Marking  
1
2007-11-01  

与2SC3437RTE85L相关器件

型号 品牌 描述 获取价格 数据表
2SC3437TE85R TOSHIBA TRANSISTOR 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma

获取价格

2SC3437Y ETC TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 200MA I(C) | SC-59

获取价格

2SC3437YTE85L TOSHIBA TRANSISTOR 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma

获取价格

2SC3438 ISAHAYA FOR HIGH VOLTAGE DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

获取价格

2SC3438 MITSUBISHI Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89

获取价格

2SC3438_15 KEXIN NPN Transistors

获取价格