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2SC3421_06 PDF预览

2SC3421_06

更新时间: 2024-11-04 04:25:59
品牌 Logo 应用领域
东芝 - TOSHIBA PC
页数 文件大小 规格书
4页 120K
描述
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency Power Amplifier Applications

2SC3421_06 数据手册

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2SC3421  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
2SC3421  
Audio Frequency Power Amplifier Applications  
Unit: mm  
Complementary to 2SA1358  
Suitable for driver of 60 to 80 watts audio amplifier  
High breakdown voltage  
Absolute Maximum Ratings (Tc = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
120  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
120  
5
1
V
I
A
C
Base current  
I
100  
mA  
B
Ta = 25°C  
Tc = 25°C  
1.5  
Collector power  
dissipation  
P
W
C
10  
Junction temperature  
T
150  
°C  
°C  
JEDEC  
JEITA  
j
Storage temperature range  
T
stg  
55 to 150  
TOSHIBA  
2-8H1A  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
Weight: 0.82 g (typ.)  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
1
2006-11-09  

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