2SC3420

更新时间： 2024-11-03 06:15:59

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管放大器局域网
页数	文件大小	规格书
4页	162K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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2SC3420 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC3420

DESCRIPTION

·With TO-126 package

·High DC current gain

·Low saturation voltage

·High collector power dissipation

APPLICATIONS

·Storobo flash applications

·Medium power amplifier applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

CONDITIONS

Open emitter

VALUE

UNIT

Collector- emitter voltage

Emitter-base voltage

Collector current

Open base

Open collector

I_CM

Collector current-peak

Base current

I_B

1.5

T_a=25℃

T_C=25℃

P_C

Collector power dissipation

T_j

Junction temperature

Storage temperature

150

℃

T_stg

-55～+150

12 3 4

中文翻译

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