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2SC3420 PDF预览

2SC3420

更新时间: 2024-11-04 07:30:43
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锦美电子 - JMNIC 晶体晶体管放大器局域网
页数 文件大小 规格书
4页 87K
描述
Silicon NPN Power Transistors

2SC3420 数据手册

 浏览型号2SC3420的Datasheet PDF文件第2页浏览型号2SC3420的Datasheet PDF文件第3页浏览型号2SC3420的Datasheet PDF文件第4页 
JMnic  
Product Specification  
Silicon NPN Power Transistors  
2SC3420  
DESCRIPTION  
·
·With TO-126 package  
·High DC current gain  
·Low saturation voltage  
·High collector power dissipation  
APPLICATIONS  
·Storobo flash applications  
·Medium power amplifier applications  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
3
Base  
Absolute maximum ratings(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
CONDITIONS  
Open emitter  
VALUE  
UNIT  
V
50  
Collector- emitter voltage  
Emitter-base voltage  
Collector current  
Open base  
20  
V
Open collector  
8
V
5
A
ICM  
Collector current-peak  
Base current  
8
A
IB  
1
1.5  
A
Ta=25  
TC=25℃  
PC  
Collector power dissipation  
W
10  
Tj  
Junction temperature  
Storage temperature  
150  
Tstg  
-55+150  

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