Datasheet > 2SC3420_06

2SC3420_06

更新时间： 2024-11-04 04:25:59

品牌	Logo	应用领域
东芝 - TOSHIBA		闪光灯 PC
页数	文件大小	规格书
4页	124K
描述
Silicon NPN Epitaxial Type (PCT Process) Strobe Flash Applications

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中文翻译

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2SC3420_06 数据手册

2SC3420

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC3420

Strobe Flash Applications

Unit: mm

Audio Power Amplifier Applications

•

High DC current gain: h

: h

= 140 to 600 (V

= 2 V, I = 0.5 A)

CE C

= 70 (min) (V

= 2 V, I = 4 A)

•

Low saturation voltage: V

= 1.0 V (max) (I = 4 A, I = 0.1 A)

CE (sat) C B

High collector power dissipation: P = 10 W (Tc = 25°C),

= 1.5 W (Ta = 25°C)

Absolute Maximum Ratings (Tc = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CES

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

JEDEC

JEITA

―

Collector current

Pulse

(Note 1)

TOSHIBA

2-8H1A

Base current

1.5

Weight: 0.82 g (typ.)

Ta = 25°C

Tc = 25°C

Collector power

dissipation

Junction temperature

150

°C

Storage temperature range

stg

−55 to 150

Note 1: Pulse test: Pulse width = 10 ms (max) Duty cycle = 30% (max)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2006-11-09

12 3 4

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