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2SC3420BL PDF预览

2SC3420BL

更新时间: 2024-01-16 15:57:52
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管放大器局域网
页数 文件大小 规格书
4页 124K
描述
Transistor

2SC3420BL 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.74
Base Number Matches:1

2SC3420BL 数据手册

 浏览型号2SC3420BL的Datasheet PDF文件第2页浏览型号2SC3420BL的Datasheet PDF文件第3页浏览型号2SC3420BL的Datasheet PDF文件第4页 
2SC3420  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
2SC3420  
Strobe Flash Applications  
Unit: mm  
Audio Power Amplifier Applications  
High DC current gain: h  
: h  
= 140 to 600 (V  
= 2 V, I = 0.5 A)  
FE  
FE  
CE C  
= 70 (min) (V  
= 2 V, I = 4 A)  
C
CE  
Low saturation voltage: V  
= 1.0 V (max) (I = 4 A, I = 0.1 A)  
CE (sat) C B  
High collector power dissipation: P = 10 W (Tc = 25°C),  
C
P
C
= 1.5 W (Ta = 25°C)  
Absolute Maximum Ratings (Tc = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
40  
20  
8
CBO  
V
CES  
CEO  
EBO  
Collector-emitter voltage  
Emitter-base voltage  
V
V
V
V
DC  
I
5
JEDEC  
JEITA  
C
Collector current  
A
Pulse  
I
8
CP  
(Note 1)  
TOSHIBA  
2-8H1A  
Base current  
I
1
1.5  
A
B
Weight: 0.82 g (typ.)  
Ta = 25°C  
Tc = 25°C  
Collector power  
dissipation  
P
W
C
10  
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
stg  
55 to 150  
Note 1: Pulse test: Pulse width = 10 ms (max) Duty cycle = 30% (max)  
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2006-11-09  

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