生命周期: | Obsolete | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.84 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 300 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 100 | JEDEC-95代码: | TO-126 |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 70 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC3417E-RA | ONSEMI |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast | |
2SC3417E-SA | ONSEMI |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast | |
2SC3417F | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | TO-126 | |
2SC3417F-LT | ONSEMI |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast | |
2SC3417-LT | ONSEMI |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast | |
2SC3419 | TOSHIBA |
获取价格 |
NPN EPITAXIAL TYPE (MEDIUM POWER AMPLIFIER APPLICATIONS) | |
2SC3419_04 | TOSHIBA |
获取价格 |
Medium-Power Amplifier Applications | |
2SC3419O | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | TO-126 | |
2SC3419-O | TOSHIBA |
获取价格 |
TRANSISTOR 0.8 A, 40 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-8H1A, 3 PIN, BIP General P | |
2SC3419Y | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | TO-126 |