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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| 2SC3417E-SA | ONSEMI |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast |
|
| 2SC3417F | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | TO-126 |
|
| 2SC3417F-LT | ONSEMI |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast |
|
| 2SC3417-LT | ONSEMI |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast |
|
| 2SC3419 | TOSHIBA |
获取价格 |
NPN EPITAXIAL TYPE (MEDIUM POWER AMPLIFIER APPLICATIONS) |
|
| 2SC3419_04 | TOSHIBA |
获取价格 |
Medium-Power Amplifier Applications |
|
| 2SC3419O | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | TO-126 |
|
| 2SC3419-O | TOSHIBA |
获取价格 |
TRANSISTOR 0.8 A, 40 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-8H1A, 3 PIN, BIP General P |
|
| 2SC3419Y | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | TO-126 |
|
| 2SC3419-Y | TOSHIBA |
获取价格 |
TRANSISTOR 0.8 A, 40 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-8H1A, 3 PIN, BIP General P |
|
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