Datasheet > 2SB1320R

2SB1320R

更新时间： 2024-10-14 21:19:39

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2SB1320R 数据手册

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SB1320

Silicon PNP epitaxial planar type

For low frequency power ampliﬁcation

Complementary to 2SD1991

 Package

ꢀCode

 Features

 Allowing supply with the radial taping

MT-1-A1

 Absolute Maximum Ratings T_a= 25°C

ꢀPin Name

1. Emitter

2. Collector

3. Base

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

–30

Unit

–25

–7

–100

–200

400

°C

Peak collector current

I_CP

Collector power dissipation

Junction temperature

P_C

T_j

150

Storage temperature

stg

–55 to +150

°C

 Electrical Characteristics T_a= 25°C±3°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio ^*

V_CBOI_C= –10 mA, I_E= 0

V_CEOI_C= –2 mA, I_B= 0

V_EBOI_E= –10 mA, I_C= 0

–30

–25

–7

I_CBO

I_CEO

h_FE

V_CB= –20 V, I_E= 0

V_CB= –20 V, I_B= 0

V_CE= –10 V, I_C= –2 mA

–1



160

460

–1

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)I_C= –100 mA, I_B= –10 mA

f_T

V_CB= –10 V, I_E= 1 mA, f = 200 MHz

MHz

Collector output capacitance

C_ob

V_CB= –10 V, I_E= 0, f = 1 MHz

3.5

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classiﬁcation

Rank

h_FE

160 to 260

210 to 340

290 to 460

Publication date : October 2008

SJC00430AED

12 3

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